通過條件成 績 ：70 分
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L1- Introduction
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L2 - Clean room and wafer clean
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L3 - Crystal growth and epitaxy
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L4 - Photolithography (I)
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L4 - Photolithography (II)
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L4 - Photolithography (III)
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L4 - Photolithography (IV)
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L5 - Oxidation and thermal process
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L6 - Etch Basics and Wet etching
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L8 - Plasma Basic and Dry Etching (I)
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L8 - Plasma Basic and Dry Etching (II)
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L9 - Diffusion and implantation
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L10 - Chemical Thin film deposition
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L11 - Metallization and Ohmic contact (I)
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L11 - Metallization and Ohmic contact (II)
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L12 - Process integration
- 課程介紹
- 課程安排
- 評論
