通過條件
成 績 :60 分
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Lecture 1 : Introduction
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Lecture 2 : Introduction to epitaxy and MOVPE
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Lecture 3 : MBE
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Lecture 4 : GaN growth by MBE (part I)
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Lecture 4 : RHEED (part II)
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Lecture 5 : XRD (part I)
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Lecture 5 : XRD (part II)
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Lecture 6 : OM and AFM
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Lecture 7 : SEM
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Lecture 8 : Luminescence
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Lecture 8 Ref #1
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Lecture 8 Ref #2
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Lecture 8 Ref #3
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Lecture 9 : SIMS
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Lecture 9 Ref #1
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Lecture 9 Ref #2
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Lecture 10 : Resistivity and mobility measurement (part I)
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Lecture 10 Ref #1 - original paper
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Lecture 10 Ref #2 - Hall measurement worksheet
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Lecture 10 : (part II) C-V
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C-V ref #1
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C-V Ref #2
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C-V Ref - Derivation of Debye Length
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Lecture 11 : I-V/L-I and Failure analysis
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L11 Ref #1
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L11 Ref#2
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L11 Ref #3
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