通過條件成 績 ：60 分
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L1- Introduction
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L2 - clean room and wafer clean
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L3 - Crystal growth and epitaxy
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L4 - Photolithography(I)
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L4 - Photolithography(II)
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L4 - Photolithography(III)
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L4 - Photolithography(IV)
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L5 - Oxidation and thermal process(I)
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L5 - Oxidation and thermal process(II)
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L6 - Etch Basics and Wet etching
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L8 - Plasma Basic and Dry Etching(I)
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L8 - Plasma Basic and Dry Etching(II)
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L8 - Plasma Basic and Dry Etching (III)
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L9 - Diffusion and implantation(I)
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L9 - Diffusion and implantation(II)
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L10 - Chemical Thin film deposition(I)
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L10 - Chemical Thin film deposition(II)
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L11 - Metallization and Ohmic contact(I)
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L11 - Metallization and Ohmic contact(II)
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L12 - Process integration(I)
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L12 - Process integration(II)
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L12 - Process integration(III)
- 課程介紹
- 課程安排
- 評論
