通過條件
成 績 :60 分
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Lecture 1 - Introduction
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Lecture 2 - MOCVD
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MOVPE reference
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Lecture 3 - MBE
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Lecture 4 - GaN Growth by MBE and RHEED
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Lecture 5 - X-ray Diffraction (I)
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Lecture 5 - X-ray Diffraction (part II)
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L5 XRD reference
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Lecture 6 - Optical Microscope and Atomic Force Microscope
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L6 AFM reference
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L6 OM reference
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L6 DIC reference
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Lecture 7 - SEM
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Lecture 8 - Luminescenc
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L8 PL reference #1
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L8 PL reference #2
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Lecture 9 - SIMS
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Lecture 10 - Resistivity and Mobility measurement (part I)
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Lecture 10 - Resistivity and Mobility measurement (part II)
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L10 Hall Work sheet
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L10 Hall example
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L10 Ref - Van der Pauw original paper
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L10 C-V Ref -2006 Charge profiling of the P-AlGaN EBL in AlGaInN LEDs
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L10 C-V ref - APL103_2013_p-doping-free InGaN LED driven by 3DHG.
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Lecture 11- OP characteristics and Failure analysis
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L11 Ref #1
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L11 Ref #2
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L11 Ref #3
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