通過條件
成  績 :60 分
  • Lecture 1 - Introduction
  • Lecture 2 - MOCVD
  • MOVPE reference
  • Lecture 3 - MBE
  • Lecture 4 - GaN Growth by MBE and RHEED
  • Lecture 5 - X-ray Diffraction (I)
  • Lecture 5 - X-ray Diffraction (part II)
  • L5 XRD reference
  • Lecture 6 - Optical Microscope and Atomic Force Microscope
  • L6 AFM reference
  • L6 OM reference
  • L6 DIC reference
  • Lecture 7 - SEM
  • Lecture 8 - Luminescenc
  • L8 PL reference #1
  • L8 PL reference #2
  • Lecture 9 - SIMS
  • Lecture 10 - Resistivity and Mobility measurement (part I)
  • Lecture 10 - Resistivity and Mobility measurement (part II)
  • L10 Hall Work sheet
  • L10 Hall example
  • L10 Ref - Van der Pauw original paper
  • L10 C-V Ref -2006 Charge profiling of the P-AlGaN EBL in AlGaInN LEDs
  • L10 C-V ref - APL103_2013_p-doping-free InGaN LED driven by 3DHG.
  • Lecture 11- OP characteristics and Failure analysis
  • L11 Ref #1
  • L11 Ref #2
  • L11 Ref #3
授課老師
黃滿芳
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