1042-半導體元件及材料特性分析-26004

報名期間：從 即日起 到 無限期
上課期間：從 2016-02-01 到 2016-07-31

• Lecture 1 - Introduction
• Lecture 2 - MOCVD
• MOVPE reference
• Lecture 3 - MBE
• Lecture 4 - GaN Growth by MBE and RHEED
• Lecture 5 - X-ray Diffraction (I)
• Lecture 5 - X-ray Diffraction (part II)
• L5 XRD reference
• Lecture 6 - Optical Microscope and Atomic Force Microscope
• L6 AFM reference
• L6 OM reference
• L6 DIC reference
• Lecture 7 - SEM
• Lecture 8 - Luminescenc
• L8 PL reference #1
• L8 PL reference #2
• Lecture 9 - SIMS
• Lecture 10 - Resistivity and Mobility measurement (part I)
• Lecture 10 - Resistivity and Mobility measurement (part II)
• L10 Hall Work sheet
• L10 Hall example
• L10 Ref - Van der Pauw original paper
• L10 C-V Ref -2006 Charge profiling of the P-AlGaN EBL in AlGaInN LEDs
• L10 C-V ref - APL103_2013_p-doping-free InGaN LED driven by 3DHG.
• Lecture 11- OP characteristics and Failure analysis
• L11 Ref #1
• L11 Ref #2
• L11 Ref #3